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 JMnic
Product Specification
Silicon PNP Power Transistors
2SA1216
DESCRIPTION With MT-200 package Complement to type 2SC2922 APPLICATIONS Audio and general purpose
PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -180 -180 -5 -17 -5 200 150 -55~150 ae ae UNIT V V V A A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-25mA ; IB=0 IC=-8A ;IB=-0.8A VCB=-180V; IE=0 VEB=-5V; IC=0 IC=-8A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=-2A ; VCE=-12V 30 500 40 MIN -180 TYP.
2SA1216
SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE Cob fT
MAX
UNIT V
-2.0 -100 -100 |I |I
V A A
pF MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=-10A;RL=| IB1=-IB2=-1A VCC=-40V 0.30 0.70 0.20 |I |I |I s s s
hFE classifications O 30-60 Y 50-100 P 70-140 G 90-180
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1216
Fig.2 outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1216
4


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